an amp company cw power transistor, 85w 30 - 400 mhz phoi 04-85 v2.00 features l npn silicon power transistor l common emitter configuration l class ab broadband operation l 85 watt pep output l diffused emitter ballasting resistors l gold metallization system l proven in thousands of arc-182 airborne radios absolute maximum ratings at 25c i parameter ) symbol 1 rating ( units 1 collector-emitter voltage v,,, emitter-base voltage v es0 65 v 4.0 v i collector current (peak) i lc ( io i a i power dissipation po 194 w junctiontemperature tj 200 ?c storagetemperature t st0 -40 to +125 ?c thermal resistance i 8.k i 0.9 i ?wjv i .a20 c? :23.83) coating -, llnliss 3th;rwisi njteii, tolerances are (millipieters +,,3nh) electrical characteristics at 25c i parameter ( symbol 1 min 1 pax 1 units i lest conditions i ( collector-emitter breakdown voltage 1 bv,,, i 65 i - 1 v i i,=10 ma, v,,=o.o v i i base-emitter breakdown voltage 1 bvm i 4.0 i ) v i i,=io ma, i,=o.o a i collector-emitter leakage current dc forward current gain ?ces h cc 4 ma 20 80 - v,,=30 v v-,=5.0 v, 1,=2.0 a 1 input power i pin i - i 16 ) w ) v,,=27 v, i,,=50 ma, pod85 w, f=400 mhz i power gain collector efficiency input return loss gp % rl 7.3 - db v,,=27 v, i,,=50 ma, po,,,=85 w. f=400 mhz 45 - % v,,=27 v, i,,=50 ma, pob,=85 w, f=400 mhz 9 - db !i,,=27 v, i,,=50 ma, p,~85 w, f=400 mhz load mismatch tolerance i vbwh-t i - i 3:l i - ) v,,=27v, 1,,=5oma, ~~~85 w, f=~oomhz specifications subject to change without notice. 9-86 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 mia-com, inc. europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
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